| PART |
Description |
Maker |
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| 29F040C-70 29F040C-90 29F040C-55 MX29F040CQI-70G M |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 90 ns, PDIP32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 5V ONLY EQUAL SECTOR FLASH MEMORY 4分位[12k × 8] CMOS单电5V只等于部门闪
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| MX29LV640BUXBI-90G MX29LV640BUTI-12G MX29LV640BUTC |
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 90 ns, PBGA63
64M-BIT [4M x 16] CMOS EQUAL SECTOR FLASH MEMORY 4M X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Macronix International Co., Ltd.
|
| MX29F4000 MX29F4000PC-12 MX29F4000PC-55 MX29F4000P |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
Macronix International
|
| MBM29LV017-12 MBM29LV017-90 MBM29LV017-90PBT MBM29 |
FLASH MEMORY 16M (2M x 8) BIT
CMOS 16M (2M x 8) bit
|
Fujitsu Microelectronics
|
| MX29F040 MX29F040PC-55 MX29F040PC-70 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 55 ns, PDIP32
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 5V PROM, 70 ns, PDIP32
|
Macronix International Co., Ltd.
|
| 29LV160C-55R 29LV160C-70 29LV160C-90 MX29LV160CTMI |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PBGA48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PBGA48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 70 ns, PDSO44
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PDSO44
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 90 ns, PDSO48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 16M X 16 FLASH 3V PROM, 70 ns, PBGA48
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 70 ns, PBGA48
|
Macronix International Co., Ltd.
PROM
MACRONIX INTERNATIONAL CO LTD
|
| HYB3165405ATL-60 HYB3165405ATL-50 HYB3165405ATL-40 |
16M x 4 Bit 4k EDO DRAM
16M x 4 Bit 8k EDO DRAM
16M x 4-Bit Dynamic RAM (4k & 8k Refresh, EDO-Version)
From old datasheet system
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| K4E640412D K4E660412D K4E640412D-JCL K4E640412D-TC |
16M x 4 bit CMOS dynamic RAM with extended data out. 3.3V, 4K refresh cycle.
16M x 4bit CMOS Dynamic RAM with Extended Data Out
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MX29LV040CTC-55R MX29LV040CTI-55R |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd.
|
| MX29LV040CQI-70G |
4M-BIT [512K x 8] CMOS SINGLE VOLTAGE 3V ONLY EQUAL SECTOR FLASH MEMORY 512K X 8 FLASH 3V PROM, 70 ns, PQCC32
|
Macronix International Co., Ltd.
|
| UPD4218160LE-60 |
CMOS 16M-Bit DRAM
|
ETC
|
